06N02C – N-Channel Enhancement Mode Power MOSFET

Part Number : 06N02C

Function : N-Channel Enhancement Mode Power MOSFET

Manufactures : FNK

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06N02C image

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pinout

Description :

FNK06N02C N-Channel Enhancement Mode Power MOSFET DESCRIPTION The FNK06N02Cuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. ID = 50A RDS(ON)< 7.5mΩ @ VGS=4.5V DS(ON)<10.0mΩ @ VGS=2.5V ● High Power and current handing capability ● Lead free product is acquired Schematic diagram Application ●Battery Switch ●Load switch ●Power management Package Marking And Ordering Information Device Marking Device Device Package 06N02C FNK06N02C TO-251 Reel Size Tape width Quantity Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC =25 Continuous Drain Current (TJ =150℃) TC =70℃ TA =25℃ ID TA =70℃ Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 20 ±12 50 20 20 15 80 50 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 40 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) www.FNK-TECH.com Page 1 v1.0 Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Symbol BVDSS IDSS IGSS VGS(th) RDS(ON) gFS Clss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. Condition VGS=0V ID=-250μA VDS=20V,V GS=0V VGS=±12V,VDS=0V VDS=VGS,ID=-250μA VGS=4.5V, ID=8A VGS=2.5V, ID=6.5A VDS=15V, ID=8A VDS=15V,V GS=0V, F=1.0MHz VDD=-15V, ID=1A, VGS=10V,R GEN=6Ω VDS=15V, ID=8A VGS=10V VGS=0V,IS=2.1A FNK06N02C Min Typ Max Unit 20 - V -- 1 μA - - ±100 nA 0.5 0.75 1 V -7 7.5 mΩ -9 10 mΩ 10 - - S - 1600 - 350 - 300 - PF PF PF - 10 - 15 - 110 70 - 30 - 5.5 -8 - nS nS nS nS nC nC nC - - 1.2 V www.FNK-TECH.com Page 2 v1.0 [...]

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06N02C Datasheet



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