07N60C3 – Power Transistor

Part Number : 07N60C3

Function : Power Transistor

Manufactures : Infineon

Images :

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07N60C3 image

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pinout

Description :

SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID 650 0.6 7.3 V Ω A • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated 2 • High peak current capability • Improved transconductance P-TO220-3-31 3 12 • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-1 123 Type SPP07N60C3 SPI07N60C3 SPA07N60C3 Package PG-TO220-3 PG-TO262 PG-TO220FP Ordering Code Q67040-S4400 Q67040-S4424 SP000216303 Marking 07N60C3 07N60C3 07N60C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=7.3A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 6) Symbol ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Value SPP_I SPA 7.3 4.6 21.9 230 7.31) 4.61) 21.9 230 0.5 0.5 7.3 7.3 ±20 ±20 ±30 ±30 83 32 -55…+150 15 Unit A A mJ A V W °C V/ns Rev. 3.2 Page 1 2009-11-27 SPP07N60C3 SPI07N60C3, SPA07N60C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 7.3 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction – case Thermal resistance, junction – case, FullPAK Thermal resistance, junction – ambient, leaded Thermal resistance, junction – ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Symbol RthJC RthJC_FP RthJA RthJA_FP RthJA Tsold min. – Values typ. – max. 1.5 3.9 62 80 Unit K/W – – 62 – 35 – – 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values min. typ. max. Drain-source breakdown voltage Drain-Source avalanche breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA V(BR)DS VGS=0V, ID=7.3A 600 – 700 – Gate threshold voltage VGS(th) ID=350µA, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C – 0.5 1 Tj=150°C – – 100 Gate-source leakage current I GSS VGS=30V, VDS=0V – – 100 Drain-source on-state resistance RDS(on) VGS=10V, ID=4.6A Tj=25°C – 0.54 0.6 Tj=150°C – 1.46 – Gate input resistance RG f=1MHz, open drain – 0.8 – Unit V µA nA Ω Rev. 3.2 Page 2 2009-11-27 SPP07N60C3 SPI07N60C3, SPA07N60C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions min. Characteristics Transconductance gfs Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Effective output capacitance,4) Co(er) energy related Effective output capacitance,5) Co(tr) time related […]

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07N60C3 Datasheet



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