Part Number: 07N65C3, SPP07N65C3
Function: 650V, MOSFET
Package: TO-220-3, TO-262-3, TO-22- Type
Manufacturer: Infineon
1 page
Description:
This is 650V, 7.3A, CoolMOS Power Transistor.
Features:
• New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 V DS RDS(on) ID PG-TO220-3 650 0.6 7.3 V Ω A PG-TO262-3-1 PG-TO220 2 1 23 P-TO220-3-1 • PG-TO-220-3 : Fully isolated package (2500 VAC; 1 minute) Type SPP07N65C3 Package PG-TO220 Marking 07N65C3 07N65C3 07N65C3 SPI07N65C3 SPA07N65C3 Maximum Ratings Parameter PG-TO262-3 PG-TO220-3 Symbol Value Unit SPA SPP_I Continuous drain current TC = 25 °C TC = 100 °C ID 7.3 4.6 7.31) A 4.61) Pulsed drain current, tp limited by Tjmax ID puls 21.9 21.9 A Avalanche energy, single pulse ID=1.5A, VDD =50V EAS EAR 230 230 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=2.5A, VDD =50V 0.5 0.5 2.5 A Avalanche current, repetitive tAR limited by Tjmax Gate source voltage IAR VGS 2.5 ±20 ±30 ±20 V Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C VGS ±30 Ptot 83 32 W Operating and storage temperature Rev. 1.91 T j , Tstg Page 1 -55…+150 °C 2009-07-23 Free Datasheet http://www.datasheetlist.com/ SPP07N65C3, SPI07N65C3 SPA07N65C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 480 V, ID = 7.3 A, Tj = 125 °C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol min. RthJC Values typ. max. Unit Thermal resistance, junction – case Thermal resistance, junction – case, FullPAK Thermal resistance, junction – ambient, leaded Thermal resistance, junction – ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) – 35 1.5 3.9 62 80 62 – K/W RthJC_FP RthJA RthJA_FP RthJA Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Tsold – – 260 °C Electrical Characteristics, at T j=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=2.5A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=350µA, VGS=VDS VDS=600V, VGS=0V, Tj=25°C Tj=150°C Values typ. 730 3 0.5 0.54 1.46 0.8 max. 3.9 Unit V 650 2.1 – µA 1 100 100 0.6 nA Ω Gate-source leakage current I GSS VGS=20V, VDS=0V VGS=10V, ID=4.6A Tj=25°C Tj=150°C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open drain Rev. 1.91 Page 2 2009-07-23 Free Datasheet http://www.datasheetlist.com/ SPP07N65C3, SPI07N65C3 SPA07N65C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol Conditions min. Values typ. 6 790 260 16 30 55 6 3.5 60 7 max. 100 15 Unit g fs Ciss Coss Crss V DS≥2*I D*RDS(on)max, ID=4.6A V GS=0V, V DS=25V, f=1MHz – S pF Effective output ca […]