10N120BND Datasheet – HGTG10N120BND

This post explains for the semiconductor 10N120BND.

The Part Number is 10N120BND.

The function of this semiconductor is HGTG10N120BND.

Manufacturers : Fairchild Semiconductor

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10N120BND image

Description :

Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49302. Ordering Information PART NUMBER PACKAGE BRAND HGTG10N120BND TO-247 10N120BND NOTE: When ordering, use the entire part number. Features • 35A, 1200V, TC = 25oC • 1200V Switching SOA Cap […]

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10N120BND Datasheet

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