Part Number : 10NM60N
Function : STD10NM60N
Manufactures : STMicroelectronics
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Description :
STD10NM60N, STF10NM60N STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω , 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET Features Order codes STD10NM60N STF10NM60N STP10NM60N STU10NM60N ■ ■ ■ VDSS @TJmax RDS(on) max. ID Pw 70 W 1 3 2 1 3 2 650 V < 0.55 Ω 10 A 25 W 70 W TO-220 TO-220FP 100% avalanche tested Low input capacitance and gate charge Low gate input resistance IPAK 1 3 2 1 3 DPAK Application Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmesh™ technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics. Table 1. Device summary Marking 10NM60N 10NM60N 10NM60N 10NM60N Package DPAK TO-220FP TO-220 IPAK Packaging Tape and reel Tube Tube Tube Order codes STD10NM60N STF10NM60N STP10NM60N STU10NM60N November 2010 Doc ID 15764 Rev 5 1/17 www.st.com 17 Free Datasheet http://www.datasheet-pdf.com/ Contents STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Contents 1 2 Electrical ratings . . 3 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 4 5 6 Test circuits 9 Package mechanical data 10 Packaging mechanical data . 15 Revision history . 16 2/17 Doc ID 15764 Rev 5 STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N Electrical ratings 1 Electrical ratings Table 2. Symbol VGS ID ID IDM (2) Absolute maximum ratings Value Parameter TO-220 TO-220FP IPAK DPAK Gate- source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Operating junction temperature Storage temperature 10 5 32 70 10 ± 25 (1) Unit V 10 5 32 70 15 2500 A A A W V/ns V 5 (1) 32 (1) PTOT dv/dt (3) 25 VISO TJ Tstg - 55 to 150 °C 1. Limited only by maximum temperature allowed. 2. Pulse width limited by safe operating area. 3. ISD ≤10 A, di/dt ≤400 A/µs, VDS peak ≤V(BR)DSS, VDD = 80% V(BR)DSS. Table 3. Symbol Rthj-case Rthj-amb Rthj-pcb TJ Thermal data Value Parameter TO-220 TO-220FP IPAK DPAK Thermal resistance junction-case max The [ .]
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