11N60C3 Datasheet – 650V, 11A, Power Transistor

This post explains for the semiconductor 11N60C3.

The Part Number is 11N60C3.

The function of this semiconductor is SPP11N60C3.

Manufacturers : Infineon Technologies

Preview images :

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11N60C3 image

Description :

SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO220-3-31 PG-TO262-3 650 0.38 11 PG-TO220 V Ω A • PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP11N60C3 SPI11N60C3 SPA11N60C3 Package PG-TO220-3 PG-TO262-3 Ordering Code Q67040-S4395 Q67042-S4403 Marking 11N60C3 11N60C3 11N60C3 PG-TO220-3-31 SP000216312 Maximum Ratings Parameter Symbol SPP_I ID 11 7 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Page 1 Value SPA Unit A 11 1) 71) 33 340 0.6 11 ±20 ±30 33 W °C V/ns A V A mJ Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V 33 340 0.6 11 ±20 ±30 125 15 Avalanche energy, repetitive t […]

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pinout

11N60C3 Datasheet



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