Part Number: 11N06LT, PHB11N06LT
Function: 55V, 11A, MOSFET
Package: SOT-428, SOT404 Type
Manufacturer: NXP Semiconductor, Philips Semiconductor
This is N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHB11N06LT is supplied in the SOT404 surface mounting package. The PHD11N06LT is supplied in the SOT428 surface mounting package.
A Trench MOS transistor is a type of metal-oxide-semiconductor (MOS) transistor that is constructed using a trench isolation structure. This design allows for better control of the electric field and reduced parasitic effects, making it a popular choice for power devices and high-voltage applications.
Trench MOS transistors find extensive use in power electronics, including motor control, power supplies, automotive applications, and high-voltage converters. They are employed in various devices such as power MOSFETs, insulated-gate bipolar transistors (IGBTs), and trench gate field-effect transistors (TGFETs).
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance