13003ADG – NPN SILICON TRANSISTOR

Part Number : 13003ADG

Function : NPN SILICON TRANSISTOR

Manufactures : Unisonic Technologies

Images :

1 page
13003ADG image

2 page
pinout

Description :

UNISONIC TECHNOLOGIES CO., LTD 13003ADG Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. „ FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability „ APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits „ EQUIVALENT CIRCUIT „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13003ADGL-TM3-T 13003ADGP-TM3-T 13003ADGL-T60-F-K 13003ADGP-T60-F-K 13003ADGL-T92-F-B 13003ADGP-T92-F-B 13003ADGL-T92-F-K 13003ADGP-T92-F-K Note: Pin Assignment: B: Base C: Collector E: Emitter Package TO-251 TO-126 TO-92 TO-92 Pin Assignment 123 BCE BCE BCE BCE Packing Tube Bulk Tape Box Bulk 13003ADGL-T60-F-B (1)Packing Type (2)Pin Assignment (3)Package Type (4)Lead Free (1) T: Tube, B: Bluk, K: Bulk (2) refer to Pin Assignment (3) TM3: TO-251, T60: TO-126, T92: TO-92 (4) L: Lead Free, P: Halogen Free www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R223-023.c 13003ADG „ MARKING PACKAGE TO-251 TO-126 TO-92 Preliminary NPN SILICON TRANSISTOR MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R223-023.c 13003ADG Preliminary NPN SILICON TRANSISTOR „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS Collector-Emitter Voltage VCEO(SUS) 400 Collector-Base Voltage Emitter Base Voltage VCBO VEBO 700 9 Collector Current Continuous Peak (1) IC ICM 1.5 3 Base Current Continuous Peak (1) IB IBM 0.75 1.5 Emitter Current Continuous Peak (1) IE IEM 2.25 4.5 TO-126 1.4 TA=25°C TO-92 1.1 Power Dissipation TO-251 TO-126 PD 1.56 20 TC=25°C TO-92 TO-251 1.5 25 Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. UNIT V V V A A A W W W W W W °C °C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R223-023.c 13003ADG Preliminary NPN SILICON TRANSISTOR „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS (Note) Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current TC=25°C TC=100°C SECOND BREAKDOWN Second Breakdown Collector Current with bass forward biased Clamped Inductive SOA with base reverse biased ON CHARACTERISTICS (Note) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product Output Capacitance SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time R […]

3 page
image

13003ADG Datasheet



This entry was posted in Uncategorized. Bookmark the permalink.