13007 PDF Datasheet – 430V, NPN Silicon Transistor

Part Number : 13007

Function : 430V, 8A, NPN Epitaxial Silicon Transistor

Package : TO-220 Type

Manufactures : Elite

Images :

13007 pdf transistor

1 page
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Description :

This is  NPN Epitaxial Silicon Transistor

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 700 V

2. Collector to Emitter Voltage : Vceo = 400 V

3. Emitter to Base Voltage : Vebo = 9 V

4. Collector Current : Ic = 8 A

5. Collector Dissipation : Pc = 80 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperature : Tsg = -55 ~ +150°C

Applications :

1. HIGH VOLTAGE SWITCH MODE

TO-220 1. Base 2. Collector 3. Emitter Electrical Characteristics (TA=25oC) Characteristic Symbol Test Conditions Collector-Emitter Breakdown Voltage BVCEO Emitter Cut-off Current IEBO DC Current Gain hFE(1) hFE(2) Collector-Emitter Saturation Voltage VCE(sat1) VCE(sat2) VCE(sat3) Base-emitter Saturation Voltage VBE(sat1) VBE(sat2) Output Capacitance COB Current Gain Bandwidth Product fT Turn On Time tON Storage Time tSTG Fall Time tf – Pulse Test : PW < 300 s, Duty cycles < 2% IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=2A VCE=5V, IC=5A IC=2A, IB=0.4A IC=5A, IB=1A IC=8A, IB=2A IC=2A, IB=0.4A IC=5A, IB=1A VCB=10V, f=0.1MHz VCE=10V, IC=0.5A VCC=125V, IC=5A 1B1=-1B2=1A RL=50 Min Typ Max Unit 400 V 1 mA 8 60 5 30 1V 2V 3V 1.2 V 1.6 V 110 pF 4 MHz 1.6 µS 3 µS 0.7 µS Elite Enterprises (H.K.) Co., Ltd. Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K. Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@elite-ent.com.hk Part No.: 13007 Page: 1 / 1 […]

 

13007 PDF Datasheet