14C40L – IRGB14C40L

Part Number : 14C40L

Function : IRGB14C40L

Manufactures : International Rectifier

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14C40L image

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Description :

PD – 93891A Ignition IGBT Features •Most Rugged in Industry •Logic-Level Gate Drive •> 6KV ESD Gate Protection •Low Saturation Voltage •High Self-clamped Inductive Switching Energy The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition applications and small-engine ignition circuits. Unique features include on-chip active voltage clamps between the Gate-Emitter and Gate-Collector which provide over voltage protection capability in ignition circuits. Absolute Maximum Ratings Parameter Max Clamped 20 14 1 10 Clamped 125 54 – 40 to 175 – 40 to 175 6 11.5 Unit V A A mA IGBT with on-chip Gate-Emitter and Gate-Collector clamps TERMINAL DIAGRAM Collector IRGS14C40L IRGSL14C40L IRGB14C40L •BVCES = 370V min, 430V max •IC @ TC = 110°C = 14A •VCE(on) typ= 1.2V @7A @25°C • IL(min)=11.5A @25°C,L=4.7mH Gate R1 R2 Description Emitter JEDEC TO-263AB JEDEC TO-262AA JEDEC TO-220AB IRGS14C40L IRGSL14C40L IRGB14C40L NOTE: IRGS14C40L is available in tape and reel. Add a suffix of TRR or TRL to the part number to determine the orientation of the device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL. Condition RG = 1K ohm VGE = 5V VGE = 5V VCES IC @ TC = 25°C IC @ TC = 110°C IG IGp VGE PD @ TC = 25°C TJ TSTG VESD IL Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Continuous Gate Current Peak Gate Current Gate-to-Emitter Voltage Maximum Power Dissipation mA tPK = 1ms, f = 100Hz V W W °C °C KV C = 100pF, R = 1.5K ohm A L = 4.7mH, T = 25°C PD @ T = 110°C Maximum Power Dissipation Operating Junction and Storage Temperature Range Electrostatic Voltage Self-clamped Inductive Switching Current Thermal Resistance Parameter Min Typ Max 1.2 40 °C/W Unit RθJC RθJA ZθJC www.irf.com Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mounted, Steady State) Transient Thermal Impedance, Juction-to-Case (Fig.11) Page 1 4/7/2000 Free Datasheet http://www.0PDF.com Ignition IGBT Parameter BVCES Collector-to-Emitter Breakdown Voltage BVGES Gate-to-Emitter Breakdown Voltage I CES Collector-to-Emitter Leakage Current 24 10 28 75 20 30 Min Typ Max 370 400 10 12 15 100 BVCER Emitter-to-Collector Breakdown Voltage R1 R2 Gate Series Resistance Gate-to-Emitter Resistance 430 Unit V V µA µA V ohm K ohm I G=2m A IRGS14C40L IRGSL14C40L IRGB14C40L Conditions R G = 1K ohm, I C=7A, VGE = 0V R G=1K ohm, VCE = 250V R G=1K ohm, VCE = 250V, TJ =150°C I C = -10m A Fig Off-State Electrical Charasteristics @ TJ = 25°C (unless otherwise specified) On-State Electrical Charasteristics @ TJ = 25°C (unless otherwise specified) Parameter VCE(on) Collector-to-Emitter Saturation Voltage Min Typ Max 1.2 1.40 V 1.35 1.55 1.35 1.55 1.5 1.6 VGE(th) Gate Threshold Voltage gfs IC Transconductance Collector Current 1.3 0.75 10 20 15 1.8 1.7 1.8 2.2 1.8 19 S A V 1.55 1.75 Unit Conditions I C = 7A, VGE = 4.5V I C = […]

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14C40L Datasheet

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