15N60C3 – SPP15N60C3

Part Number : 15N60C3

Function : SPP15N60C3

Manufactures : Infineon

Images :

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15N60C3 image

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Description :

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 3 12 • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) 650 V 0.28 Ω 15 A PG-TO220 Type SPP15N60C3 SPI15N60C3 SPA15N60C3 Package PG-TO220 PG-TO262 PG-TO220FP Ordering Code Q67040-S4600 Q67040-S4601 SP000216325 Marking 15N60C3 15N60C3 15N60C3 Maximum Ratings Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=7.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=15A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 6) ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Value SPP_I SPA 15 151) 9.4 9.41) 45 45 460 460 Unit A A mJ 0.8 0.8 15 15 ±20 ±20 ±30 ±30 156 34 -55…+150 15 A V W °C V/ns Rev. 3.2 page 1 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 15 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction – case Thermal resistance, junction – case, FullPAK Thermal resistance, junction – ambient, leaded Thermal resistance, junction – ambient, FullPAK Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 3) Symbol dv/dt Value 50 Unit V/ns Symbol RthJC RthJC_FP RthJA RthJA_FP Tsold min. – Values typ. max. – 0.8 – 3.7 – 62 – 80 – 260 Unit K/W °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage Drain-Source avalanche breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA V(BR)DS VGS=0V, ID=15A 600 – Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Gate input resistance RG ID=675µA, VGS=VDS VDS=600V, VGS=0V, Tj=25°C Tj=150°C VGS=30V, VDS=0V VGS=10V, ID=9.4A Tj=25°C Tj=150°C f=1MHz, open drain 2.1 – – Values typ. max. -700 – 3 3.9 0.1 1 – 100 – 100 0.25 0.68 1.23 0.28 – Unit V µA nA Ω Rev. 3.2 page 2 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 Electrical Characteristics Parameter Symbol Conditions Transconductance gfs Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Effective output capacitance,4) Co(er) energy related Effective output capacitance,5) Co(tr) time related VDS≥2*ID*RDS(on)max, ID=9.4A VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V to 480V Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf VDD=480V, VGS=0/10V, ID=15A, RG=4.3Ω […]

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15N60C3 Datasheet



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