Part Number: 18N20GH, AP18N20GH
Function: 200V, 18A, N-channel MOSFET
Package: TO-252(H), TO-251(J) Type
Manufacturer: Advanced Power Electronics
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Description:
18N20GH series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP18N20GJ) are available for low-profile applications.
Features:
1. Simple Drive Requirement
2. Low On-resistance
3. Fast Switching Characteristics
4. RoHS Compliant & Halogen-Free
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 200 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 18 A
4. Total Power Dissipation: Pd = 89 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
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