Part Number : 18N20GH, AP18N20GH
Function : N-ch MOSFET – APEC
Manufactures : Advanced Power Electronics
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Description :
Advanced Power Electronics Corp. AP18N20GH/J-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics ▼ RoHS Compliant & Halogen-Free D G Description S AP18N20 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP18N20GJ) are available for low-profile applications. BVDSS RDS(ON) ID 200V 170mΩ 18A G DS TO-252(H) G DS TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage VGS Gate-Source Voltage 200 V + 20 V ID@TC=25℃ Drain Current, VGS @ 10V 18 A ID@TC=100℃ IDM Drain Current, VGS @ 10V Pulsed Drain Current1 9.5 A 60 A PD@TC=25℃ Total Power Dissipation 89 W PD@TA=25℃ Linear Derating Factor Total Power Dissipation3 0.7 W/℃ 2W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value 1.4 62.5 110 Unit ℃/W ℃/W ℃/W 1 201412185 AP18N20GH/J-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Drain-Source Breakdown Voltage VGS=0V, ID=250uA Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=8A Gate Threshold Voltage VDS=VGS, ID=250uA Forward Transconductance VDS=10V, ID=10A Drain-Source Leakage Current VDS=200V, VGS=0V Gate-Source Leakage Total Gate Charge2 VGS= + 20V, VDS=0V ID=10A Gate-Source Charge VDS=160V Gate-Drain (“Miller”) Charge Turn-on Delay Time2 VGS=10V VDD=100V Rise Time ID=11A Turn-off Delay Time RG=9.1Ω Fall Time VGS=10V Input Capacitance VGS=0V Output Capacitance VDS=25V Reverse Transfer Capacitance f=1.0MHz Gate Resistance f=1.0MHz 200 – – V – 0.25 – V/℃ – – 170 mΩ 2 – 4V – 9.5 – S – – 10 uA – – +100 nA – 19 30 nC -5 – nC -6 – nC -9 – ns – 21 – ns – 25 – ns – 19 – ns – 1065 1700 pF – 185 – pF – 3 – pF – 1.6 2.4 Ω Source-Drain Diode Symbol Parameter VSD Forward On Voltage2 trr Reverse Recovery Time2 Qrr Reverse Recovery Charge Test Conditions IS=10A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs […]
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