Part Number: 1D0N60D
Function: 600V, 1A, N-CHANNEL MOSFET
This is 600V, 1A, N-CHANNEL MOS FIELD EFFECT TRANSISTOR.
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
1. VDSS= 600V, ID= 1.0A
2. Drain-Source ON Resistance :
3. RDS(ON)=12 Ohm @VGS = 10V
4. Qg(typ.) = 5.9nC
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 1 A
4. Drain Power Dissipation: Pd = 28 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: KHB1D0N60D, KHB1D0N60I, KHB1D0N60