A1020 – 2SA1020 – Silicon PNP Epitaxial Transistor

Part Number : A1020

Function : 2SA1020

Manufactures : Toshiba Semiconductor

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2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications • • • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SC2655 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating −50 −50 −5 −2 900 150 −55 to 150 Unit V V V A mW °C °C JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton 20 µs IB1 Switching time Storage time tstg Input IB2 Test Condition VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.5 A VCE = −2 V, IC = −1.5 A IC = −1 A, IB = −0.05 A IC = −1 A, IB = −0.05 A VCE = −2 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1 MHz Weight: 0.36 g (typ.) Min ⎯ ⎯ −50 70 40 ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 40 0.1 Max −1.0 −1.0 ⎯ 240 ⎯ −0.5 −1.2 ⎯ ⎯ ⎯ Unit µA µA V V V MHz pF IB2 IB1 Output 30 Ω ⎯ 1.0 ⎯ µs VCC = −30 V ⎯ 0.1 ⎯ Fall time tf −IB1 = IB2 = 0.05 A DUTY CYCLE ≤ 1% Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 1 2004-07-07 Free Datasheet http:// 2SA1020 Marking A1020 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 Free Datasheet http:// 2SA1020 VCE – IC −1.0 Common emitter −1.0 VCE – IC Common emitter VCE (V) −0.8 IB = −5 mA −10 −20 −40 −80 Ta = 25°C VCE (V) −0.8 IB = −5 mA −0.6 −20 −30 −40 −60 Ta = 100°C −80 −120 −160 −180 −120 −0.6 −160 −0.4 −200 Collector-emitter voltage Collector-emitter voltage −0.4 −200 −0.2 −0.2 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 Collector current IC (A) Collector current IC (A) VCE – IC −1.0 Common emitter 1000 hFE – IC Common emitter 500 VCE = −2 V Ta = 100°C VCE (V) hFE DC current gain −0.8 IB = −10 mA −20 −40 −30 −60 Ta = −55°C −80 −120 −160 300 Collector-emitter voltage −0.6 100 50 30 25 −55 −0.4 −200 −0.2 10 −0.01 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 −0.03 −0.1 −0.3 −1 −3 Collector current IC (A) Collector current IC (A) VCE (sat) – IC −1 […]

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A1020 Datasheet


3DD13009 – NPN Transistor

Part Number : 3DD13009

Function : NPN Transistor

Manufactures : LGE

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3DD13009(NPN) TO-220 Transistor 1. BASE TO-220 2. COLLECTOR Features 3 2 1 — power switching applications 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 700 400 9 12 2 150 -55-150 Units V V V A W ℃ ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Fall time Storage time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT tf ts Test conditions IC =1mA, IE=0 IC=10mA, IB=0 IE= 1mA, IC=0 VCB=700V,IE=0 VCE=400V,IB=0 VEB=9V, IC=0 VCE=5V, IC=3A IC=8A,IB=1.6A IC=8A, IB=1.6A VCE=10V,Ic=500mA, f =1MHz IC=8A, IB1=-IB2=1.6A VCC=125V MIN TYP MAX UNIT 700 V 400 V 9V 100 µA 100 µA 100 µA 8 40 1.5 V 1.6 V 4 MHz 0.9 µs 4 µs CLASSIFICATION OF hFE Rank Range 8-15 15-20 20-25 25-30 30-35 35-40 Typical Characteristics 3DD13009(NPN) TO-220 Transistor […]

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3DD13009 Datasheet