2SD1555 – NPN TRIPLE DIFFUSED(PLANAR SILICON TRANSISTOR)

Part Number : 2SD1555

Function : NPN TRIPLE DIFFUSED(PLANAR SILICON TRANSISTOR)

Manufactures : Wing Shing Computer Components

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Description :

2SD1555 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) ! ! High Collector-Base Voltage(VCBO=1500V) High Speed Switching 2-16E3A ABSOLUTE MAXIMUM RATINGS (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 1500 1500 6 5 50 150 -50~150 Unit V V V A W o o C C ELECTRICAL CHARACTERISTICS (TA=25oC) Characterristic Collector- Emitter Cutoff Current(VBE=0) Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Symbol ICES ICBO IEBO hFE VCE(sat) Test Condition VCE= 1400 V , RBE=0 VCB= 800 V , IE=0 VEB= 4V , IC=0 VCE= 5V , IC=1A IC=5A , IB=1A Min Typ Max 1.0 10 1.0 Unit mA µA mA V 8 5.0 Wing Shing Computer Components Co., (H.K..)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com […]

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2SD1555 Datasheet

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2N2222 – Silicon NPN Power Transistor

Part Number : 2N2222

Function : Silicon NPN Power Transistor

Manufactures : Inchange Semiconductor

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Description :

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current- IC= 0.8A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·Complement to Type 2N2907 APPLICATIONS ·Designed for general-purpose switching and linear amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage IC Collector Current-Continuous IBM Base Current-Peak PC Collector Power Dissipation@TC=25℃ TJ Junction Temperature Tstg Storage Temperature THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Thermal Resistance,Junction to Ambient isc Product Specification 2N2222 VALUE 60 30 5 0.8 0.2 0.5 150 -65~150 UNIT V V V A A W ℃ ℃ MAX 350 UNIT K/W isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N2222 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR) CEO V(BR)EBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IC=10mA ; IB=0 IE=10μA ; IC=0 VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat)-1 Base-Emitter Saturation Voltage VBE(sat)-2 Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 150mA; IB= 15mA IC= 500mA; IB= 50mA IC= 150mA; IB= 15mA IC= 500mA; IB= 50mA VCB= 50V; IE=0 VEB= 5V; IC=0 hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-3 DC Current Gain hFE-4 DC Current Gain hFE-5 DC Current Gain fT Current Gain-Bandwidth Product COB Output Capacitance Switching Times IC= 0.1mA ; VCE= 10V IC= 1mA ; VCE= 10V IC= 10mA ; VCE= 10V IC= 150mA ; VCE= 10V IC= 500mA ; VCE= 10V IC= 20mA ; VCE= 20V;ftest= 100MHz IE= 0 ; VCB= 10V; ftest= 1.0MHz td Delay Time tr Rise Time tstg Storage Time tf Fall Time IC= 150mA; IB1= -IB2= 15mA MIN MAX UNIT 30 V 5V 0.4 V 1.6 V 1.3 V 2.6 V 1.5 uA 50 nA 35 50 75 100 300 30 250 MHz 8 pF 10 ns 25 ns 200 ns 60 ns isc Website:www.iscsemi.cn […]

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2N2222 Datasheet

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