K30H603 – IGBT

Part Number : K30H603

Function : IGBT

Manufactures : Infineon

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K30H603 image

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Description :

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW30N60H3 600V high speed switching series third generation Data sheet Industrial Power Control http:// IKW30N60H3 High speed switching series third generation High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode Features: TRENCHSTOPTM technology offering • very low VCEsat • low EMI • Very soft, fast recovery anti-parallel diode • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Applications: • uninterruptible power supplies • welding converters • converters with high switching frequency G C E C G E Key Performance and Package Parameters Type IKW30N60H3 VCE 600V IC 30A VCEsat, Tvj=25°C 1.95V Tvjmax 175°C Marking K30H603 Package PG-TO247-3 2 Rev. 2.2, 2014-03-12 IKW30N60H3 High speed switching series third generation Table of Contents Description 2 Table of Contents . 3 Maximum ratings . . 4 Thermal Resistance . . 4 Electrical Characteristics . . 5 Electrical Characteristics diagrams 7 Package Drawing .14 Testing Conditions 15 Revision History . .16 Disclaimer .16 3 Rev. 2.2, 2014-03-12 IKW30N60H3 High speed switching series third generation Maximum ratings Parameter Collector-emitter voltage, Tvj ≥ 25°C DC collector current, limited by Tvjmax TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tvjmax Turn off safe operating area VCE ≤ 600V, Tvj ≤ 175°C, tp = 1µs Diode forward […]

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K30H603 Datasheet


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K2640 Datasheet – 2SK2640 Transistor

Part Number : K2640

Function : 2SK2640

Manufactures : Fuji Electric

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K2640 image

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Description :

2SK2640-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 500V 0,9Ω 10A 50W > Outline Drawing > Applications – Switching Regulators – UPS – DC-DC converters – General Purpose Power Amplifier > Maximum Ratings and Characteristics – Absolute Maximum Ratings T( C=25°C), unless otherwise specified > Equivalent Circuit Rating 500 10 40 ±30 10 77,6 50 150 -55 ~ +150 Unit V A A V A mJ W °C °C Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg – Electrical Characteristics (TC=25°C), Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge unless otherwise specified Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS =0V ID=1mA VDS= VGS VDS=500V Tch =25°C VGS=0V Tch=125°C VGS =±30V VDS=0V ID=5A VGS =10V ID=5A VDS=25V VDS=25V VGS =0V f=1MHz VCC=300V ID=10A VGS=10V RGS=10 Ω Tch =25°C L = 100µH IF=2xI DR VGS =0V T ch =25°C IF=IDR V GS =0V -dI F/dt=100A/µs T ch =25°C Min. 500 3,5 Typ. 4,0 10 0,2 10 0,73 5 950 180 80 25 70 70 45 1,1 450 5,5 Max. 4,5 500 1,0 100 0,90 1450 270 120 40 110 110 70 1,65 2,5 10 Unit V V µA mA nA Ω S pF pF pF ns ns ns ns A V ns µC – Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 62,5 2,5 Unit °C/W °C/W Collmer Semiconductor – P.O. Box 702708 – Dallas TX – 75370 – 972.233.1589 – 972.233.0481 Fax – www.collmer.com – 11/98 N-channel MOS-FET 500V 0,9Ω 2SK2640-01MR FAP-IIS Series Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch); ID=5A; VGS=10V 10A 50W > Characteristics Typical Output Characteristics ID=f(VDS); 80µs pulse test; TC=25°C Typical Transfer Characteristics ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C ↑ ID [A] ↑ RDS(ON) [Ω] ↑ 2 ID [A] 1 3 VDS [V] → Tch [°C] → VGS [V] → Typical Drain-Source On-State-Resistance vs. ID RDS(on)=f(ID); 80µs pulse test; TC=25°C Typical Forward Transconductance vs. ID gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=1mA; VDS=VGS ↑ RDS(ON) [Ω] ↑ gfs [S] ↑ 5 VGS(th) [V] 4 6 ID [A] → ID [A] → Tch [°C] → Typical Ca […]

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K2640 Datasheet

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