K6A650 PDF Datasheet – 650V, N-Ch, MOSFET ( TK6A65D )

Part Number : K6A650, Correct Part Number : K6A65D, TK6A65D

Function : 650V, N-Channel MOSFET

Package : TO-220 Type

Manufactures : Toshiba Semiconductor

Images :

K6A650 transistor datasheet mosfet TK6A65D

Description :

1. Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
4. Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Applications

Switching Regulator

Pinout :

K6A650 pinout K6A650D

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Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 650 V
2. Gate to source voltage : VGSS =  ± 30 V
3. Drain current : ID =  6 A
4. Drain power dissipation (Tc = 25°C) : PD = 45 W
5. Single pulse avalanche energy : Eas = 281 mJ
6. Avalanche current : I ar = 6 A
7. Channel temperature : Tch = 150 °C
8. Storage temperature : Tstg = +150 °C

K6A65D Datasheet

K6A650-pdf pdf

D947 PDF Datasheet – NPN Transistor ( 2SD947 )

Part Number : D947, 2SD947

Function : NPN Darlington Transistor

Package : TO-126M Type

Manufactures : Rohm

Images :
D947 npn transistor

Features

1. Darlington connection provides high DC current in (hFE)
2. Built-in resistrance fo approx. 4kΩ between its base and emitter. Exellent temperature stability.
3. The rear surface of this device is also molded, eliminating the need for insulation.

Pinout

D947 pinout datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 40 V
2. Collector to Emitter Voltage : Vceo = 40 V
3. Emitter to Base Voltage : Vebo = 5 V
4. Collector Current : Ic = 2 A
5. Total Dissipation : Pc = 5 W
6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -55 ~ +150°C

[…]

 

D947 Datasheet

D947 pdf