20N60S5 Datasheet – SPP20N60S5

Part Number : 20N60S5

Function : SPP20N60S5

Manufactures : Infineon Technologies

Images :

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20N60S5 image

Description :

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP20N60S5 VDS RDS(on) ID 600 0.19 20 V Ω A PG-TO220 2 P-TO220-3-1 123 Type SPP20N60S5 Package PG-TO220 Ordering Code Q67040-S4751 Marking 20N60S5 Maximum Ratings Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C ID Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 10 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage VGS Gate source voltage AC (f >1Hz) VGS Power dissipation, TC = 25°C Operating and storage temperature Ptot Tj , Tstg Value 20 13 40 690 1 20 ±20 ±30 208 -55… +150 Unit A mJ A V W °C Rev. 2.8 Page 1 […]

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20N60S5 Datasheet



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