23N50E – FMH23N50E

Part Number : 23N50E

Function : FMH23N50E

Manufactures : Fuji Electric

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23N50E image

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Description :

FMH23N50E Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-3P(Q) Equivalent circuit schematic Drain(D) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Gate(G) Source(S) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 500 500 ±23 ±92 ±30 23 767.3 31.5 9.3 100 2.50 315 150 -55 to + 150 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C Remarks VGS = -30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS VGS (th) I DSS I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf Q th QG Q GS Q GD I AV VSD trr Qrr Conditions I D =250µA, VGS =0V I D =250µA, VDS =VGS VDS =500V, VGS =0V VDS =400V, VGS =0V VGS =±30V, VDS =0V I D =11.5A, VGS =10V I D =11.5A, VDS =25V VDS =25V VGS =0V f=1MHz Vcc =300V VGS =10V I D =11.5A RGS =5.6Ω Vcc =250V I D =23A VGS =10V L=1.16mH, Tch =25°C I F =23A, VGS =0V, Tch =25°C I F =23A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 500 2.5 14 23 typ. 3.0 10 0.21 28 3500 330 24 24 13 150 20 11 93 24 30 0.90 0.5 8 max. 3.5 25 250 100 0.245 5250 495 36 36 19.5 225 30 16.5 139.5 36 45 1.35 Unit V V µA nA Ω S pF Tch =25°C Tch =125°C ns nC A V µs µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Test Conditions Channel to case Channel to ambient min. typ. max. 0.40 50.0 Unit °C/W °C/W Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =10A, L=14.1mH, Vcc=50V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the ‘Transient Themal impeadance’ graph. Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150 […]

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23N50E Datasheet

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