Part Number: 29F32G08C
Function: 32GB, NAND Flash Memory
Package: TSSOP 48 Pin Type
NAND technology provides a cost-effective solution for applications requiring highdensity solid-state storage. The MT29F2G08AxB and MT29F2G16AxB are 2Gb NAND Flash memory devices. The MT29F4G08BxB and MT29F4G16BxB are two-die stacks that operate as a single 4Gb device. The MT29F8G08FAB is a four-die stack that operates as two independent 4Gb devices (MT29F4G08BxB), providing a total storage capacity of 8Gb in a single, space-saving package. Micron NAND Flash devices include standard NAND features as well as new features designed to enhance system-level performance.
• Open NAND Flash Interface (ONFI) 2.1-compliant1 • Multiple-level cell (MLC) technology • Organization – Page size x8: 4320 bytes (4096 + 224 bytes) – Block size: 256 pages (1024K + 56K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 32Gb: 4096 blocks; 64Gb: 8192 blocks; 128Gb: 16,384 blocks; 256Gb: 32,768 blocks • Synchronous I/O performance – Up to synchronous timing mode 4 – Clock rate: 12ns (DDR) – Read/write throughput per pin: 166 MT/s • Asynchronous I/O performance – Up to asynchronous timing mode 4 – tRC/tWC: 25ns (MIN) • Array performance – Read page: 50µs (MAX) – Program page: 900µs (TYP) – Erase block: 3ms (TYP) • Operating Voltage Range – VCC: 2.7–3.6V – VCCQ: 1.7–1.95V, 2.7–3.6V • Command set: ONFI NAND Flash Protocol • Advanced Command Set – Program cache – Read cache sequential – Read cache random – One-time programmable (OTP) mode – Multi-plane commands – Multi-LUN operations – Read unique ID – Copyback • First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see Error Management (page 108). • RESET (FFh) required as first command after poweron • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status • Data strobe (DQS) signals provide a hardware method for synchronizing data DQ in the synchronous interface • Copyback operations supported within the plane from which data is read • Quality and reliability – Data retention: 10 years – Endurance: 5000 PROGRAM/ERASE cycles • Operating temperature: – Commercial: 0°C to +70°C – Industrial (IT): –40ºC to +85ºC • Package – 52-pad LGA – 48-pin TSOP – 100-ball BGA Note: 1. The ONFI 2.1 specification is available at www.onfi.org. PDF: 09005aef836c9ded Rev. F 12/09 EN 1 Products and specifications discussed herein are subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the […]