2N2222A-M – TRANSISTOR

Part Number : 2N2222A-M

Function : TRANSISTOR

Manufactures : DSI

Images :

1 page
2N2222A-M image

2 page
pinout

Description :

Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base (VCBO) Voltage, Collector to Emitter (VCE) Voltage, Emitter to Base (VEBO) Collector Current (IC) Base Current (IB) Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) empty 75.0 V 40.0 V 6.0 V 0.8 A 0.08 A 1.8 W 84.0 °C/W 200.0 °C empty empty NO. TYPE empty empty CASE empty empty 2N2222A-M NPN empty empty TO-18 MIL-S-19500 BURN-IN 48h/125°C PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted C NO. SYMBOL CONDITIONS MIN. MAX. UNITS 1. BVCEO IC = 10 mA (1) 40.0 – V 2. BVCBO IC = 10 µA (1) 75.0 – V 3. BVEBO IE = 10 µA (1) 6.0 – V 4. ICBO VCB = 60 V – 10.0 nA 5. – VCB = 60 V , TA = 150 °C – 10.0 µA 6. IEBO VEB = 3 V – 10.0 nA 7. hFE IC = 0.1 A , VCE = 10 V (1) 35.0 – – 8. – IC = 1 mA , VCE = 10 V (1) 50.0 – – 9. – IC = 10 mA , VCE = 10 V (1) 75.0 – – 10. – IC = 150 mA , VCE = 10 V (1) 100.0 300.0 – 11. – IC = 500 mA , VCE = 10 V (1) 40.0 – – 12. VCE(SAT) IC = 150 mA , IB = 15 mA (1) – 0.3 V 13. – IC = 500 mA , IB = 50 mA (1) – 1.0 V 14. VBE(SAT) IC = 150 mA , IB = 15 mA (1) – 1.2 V 15. – IC = 500 mA , IB = 50 mA (1) – 2.0 V 16. fT IC = 20 mA , VCE = 20 V 300.0 – MHz 17. Cobo VCB = 10 V – 8.0 pF 18. Cebo VEB = 0.5 V – 25.0 pF 19. 20. Notes (1)pulse-tested tp ≤ 300 µs, duty cycle ≤ 2 % empty empty empty DIMENSIONS in mm Marking 2N2222A-M + GREEN DOT Customer GENERAL PURPOSE […]

3 page
image

2N2222A-M Datasheet


This entry was posted in Uncategorized. Bookmark the permalink.