2N2222A – HIGH SPEED SWITCHES

Part Number : 2N2222A

Function : HIGH SPEED SWITCHES

Manufactures : SGS-THOMSON

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Description :

2N2218A-2N2219A 2N2221A-2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218A and 2N2219A) and in Jedec TO-18 (for 2N2221A and 2N2222A) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2N2218A/2N2219A approved to CECC 50002-100, 2N2221A/2N2222A approved to CECC 50002-101 available on request. TO-39 TO-18 INTERNA L SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RAT INGS Symbol V CB O V CE O V EBO IC P to t Parameter Collector-base Voltage (I E =0 ) Collector-emitter Voltage (I B =0 ) Emitter-base Voltage (I C =0 ) Collector Current Total Power Dissipation at T am b ≤ 25 °C for 2N2218 A and for 2N2221 A and at T ca s e ≤ 25 °C for 2N2218 A and for 2N2221 A and Storage Temperature Junction Temperature 2N2 219A 2N2 222A 2N2 219A 2N2 222A Value 75 40 6 0.8 0.8 0.5 3 1.8 – 65 to 200 175 Unit V V V A W W W W °C °C 1/8 http:// T st g Tj January 1989 2N 2218A-2N2219A-2N2221A-2N2222A THERMAL DATA 2N2218A 2N2219A R th j- c as e R t h j- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 50 °C/W 187.5 °C/W 2N2221A 2N2222A 83.3 °C/W 300 °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CBO I CE X I EB O I BEX V ( BR) V (BR) V ( BR ) V CE VB E CB O Parameter Collector Cutoff Current (I E = 0) Collector Cutoff Current (V BE =– 3 V) Emitter Cutoff Current (I C =0 ) Base Cutoff Current (V BE =– 3 V) Collector-base Breakdown Voltage (I E =0 ) Collector-emitter Breakdown Voltage (I B =0 ) Emittter-base Breakdown Voltage (I C =0 ) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain Test Conditions V CB = 60 V V CB =6 0 V V CE =6 0 V V EB =3 V V CE =6 0 V I C =1 0 µA7 I C =1 0 mA I E =1 0 µA6 I C =1 50 mA I C =5 00 mA I C =1 50 mA I C =5 00 mA I B =1 5 mA I B =5 0 mA I B =1 5 mA I B =5 0 mA T am b = 150 °C Min. Typ. Max. 10 10 10 10 20 Unit nA µA nA nA nA V V V 5 40 CEO * EBO (s at )* 0.3 1 0.6 1.2 2 V V V V (s at )* h FE * for 2N2218A and 2N2221A I C = 0.1 mA V CE =1 0 V I C =1 mA V CE =1 0 V I C =1 0 mA V CE =1 0 V I C =1 50 mA V CE =1 0 V I C =5 00 mA V CE =1 0 V I C =1 50 mA V CE =1 V I C =1 0 mA V CE =1 0 V T am b =– 55 °C for 2N2219A and 2N2222A I C = 0.1 mA V CE =1 0 V I C =1 mA V CE =1 0 V I C =1 0 mA V CE =1 0 V I C =1 50 mA V CE =1 0 V I C =5 00 mA V CE =1 0 V I C =1 50 mA V CE =1 V I C =1 0 mA V CE =1 0 V T am b =– 55 °C 20 25 35 40 25 20 15 35 50 75 100 40 50 35 120 h FE * DC Current Gain 300 * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. 2/8 2N 221 8A -2N221 9A -2N222 1A -2N222 2A ELECTRICAL CHARACTERISTICS (continued) Symbol hfe Parameter Small Signal Current Gain Test Conditions I C = 1 mA f = 1 kHz for 2N2218A […]

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2N2222A Datasheet


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