2N3055 – COMPLEMENTARY SILICON POWER TRANSISTORS

Part Number : 2N3055

Function : COMPLEMENTARY SILICON POWER TRANSISTORS

Manufactures : STMicroelectronics

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Description :

TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet – production data Features • Low collector-emitter saturation voltage • Complementary NPN – PNP transistors Applications • General purpose • Audio amplifier Description The devices are manufactured in planar technology with “base island” layout and are suitable for audio, power linear and switching applications. Order code 2N3055 MJ2955 Table 1. Device summary Marking Package 2N3055 MJ2955 TO-3 Packaging Tray November 2013 This is information on a product in full production. DocID4079 Rev 8 1/7 www.st.com Absolute maximum rating 1 Absolute maximum rating 2N3055, MJ2955 Table 2. Absolute maximum rating Symbol Parameter VCBO VCER VCEO VEBO IC IB PTOT Tstg TJ Collector-base voltage (IE = 0) Collector-emitter voltage (RBE = 100 Ω) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Base current Total dissipation at Tc ≤ 25°C Storage temperature Max. operating junction temperature NPN PNP Value 2N3055 MJ2955 100 70 60 7 15 7 115 -65 to 200 200 Unit V V V V A A W °C °C Note: Symbol Table 3. Thermal data Parameter Rthj-case Thermal resistance junction-case max For PNP type voltage and current values are negative Value 1.5 Unit °C/W 2/7 DocID4079 Rev 8 2N3055, MJ2955 2 Electrical characteristics Electrical characteristics (Tcase = 25°C; unless otherwise specified) Symbol Table 4. Electrical characteristics Parameter Test conditions Min. ICEX Collector cut-off current (VBE = -1.5 V) VCE = 100 V VCE = 100 V ICEO Collector cut-off current (IB = 0) VCE = 30 V IEBO Emitter cut-off current (IC = 0) VEB = 7 V (1) Collector-emitter sustaining VCEO(sus) voltage (IB = 0) IC = 200 mA (1) Collector-emitter sustaining VCER(sus) voltage (RBE = 100 Ω) IC = 200 mA (1) Collector-emitter saturation VCE(sat) voltage (1) VBE Base-emitter voltage IC = 4 A IC = 10 A IC = 4 A (1) hFE DC current gain IC = 4 A IC = 10 A 1. Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5% o TC = 150 C IB = 400 mA IB = 3.3 A VCE = 4 V VCE = 4 V VCE = 4 V 60 70 20 5 Typ. Max. 1 5 0.7 5 1 3 1.8 70 Unit mA mA mA mA V V V V V Note: For PNP type voltage and current values are negative 2.1 Electrical characteristics (curve) Figure 2. Safe operating area IC (A) Pulse operation for single non repetitive pulse 10 IC max 100µs DC operation 1ms 1 10ms 0.1 1 10 VCE(V) DocID4079 Rev 8 3/7 7 Package mechanical data 3 Package mechanical data 2N3055, MJ2955 In order to meet environmental requirements, ST offers these devices in different grades of ®® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. 4/7 DocID4079 Rev 8 2N3055, MJ2955 Dim. A B C D E G N P R U V Package mechanical data Table 5. TO-3 mechanical data mm Min. […]

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2N3055 Datasheet


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