2N6027 – Programmable Unijunction Transistor

Part Number : 2N6027

Function : Programmable Unijunction Transistor

Manufactures : ON Semiconductor

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2N6027 image

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Description :

2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate. Supplied in an inexpensive TO−92 plastic package for high−volume requirements, this package is readily adaptable for use in automatic insertion equipment. Features • Programmable − RBB, h, IV and IP • Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA • Low Gate to Anode Leakage Current − 10 nA Maximum • High Peak Output Voltage − 11 V Typical • Low Offset Voltage − 0.35 V Typical (RG = 10 kW) • Pb−Free Packages are Available* http://onsemi.com PUTs 40 VOLTS, 300 mW G A K 1 2 3 TO−92 (TO−226AA) CASE 029 STYLE 16 MARKING DIAGRAM 2N 602x AYWW G G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev.6 1 2N602x = Device Code x = 7 or 8 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT 1 Anode 2 Gate 3 Cathode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: 2N6027/D 2N6027, 2N6028 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Power Dissipation* Derate Above 25°C DC Forward Anode Current* Derate Above 25°C PF 1/qJA IT 300 mW 4.0 mW/°C 150 mA 2.67 mA/°C DC Gate Current* Repetitive Peak Forward Current 100 ms Pulse Width, 1% Duty Cycle 20 ms Pulse Width, 1% Duty Cycle* IG ITRM “50 1.0 2.0 mA A Non−Repetitive Peak Forward Current 10 ms Pulse Width ITSM 5.0 A Gate to Cathode Forward Voltage* Gate to Cathode Reverse Voltage* Gate to Anode Reverse Voltage* Anode to Cathode Voltage* (Note 1) Capacitive Discharge Energy (Note 2) VGKF VGKR VGAR VAK E 40 *5.0 40 ±40 250 V V V V mJ Power Dissipation (Note 3) PD 300 mW Operating Temperature TOPR −50 to +100 °C Junction Temperature TJ −50 to +125 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *Indicates JEDEC Registered Data 1. Anode positive, RGA = 1000 W Anode negative, RGA = open 2. E = 0.5  CV2 capacitor discharge en […]

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2N6027 Datasheet



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