2P4M Datasheet – 2.0 Ampere Passivated Process Thyristor

This post explains for the semiconductor 2P4M.

The Part Number is 2P4M.

The function of this semiconductor is 2.0 Ampere Passivated Process Thyristor.

Manufacturers : Thinki Semiconductor

Preview images :

1 page
2P4M image

Description :

2P4M ® 2P4M Pb Free Plating Product Pb 2.0 Ampere Passivated Process Thyristor—Sensitive Gate SCR DESCRIPTION: ThinkiSemi 2P4M SCR with the parallel resistor between Gate and Cathode are especially recommended for use on straight hair, igniter, anion generator etc.. MAIN FEATURES TO-202 Pkg Outline Symbol Value IT(RMS) IGT VTM 2 ≤200 ≤1.5 ABSOLUTE MAXIMUM RATINGS Unit A μA V Internal structure A(2) K(1) RGK G(3) 3 2 1 Parameter Storage junction temperature range Operating junction temperature range Repetitive peak off-state voltage Repetitive peak reverse voltage Symbol Tstg Tj VDRM VRRM Value -40-150 -40-110 600 600 Unit ℃ ℃ V V RMS on-state current @ (TC=72℃) IT(RMS) 2 A Non repetitive surge peak on-state current (tp=10ms) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current Peak gate current (tp=20μs, Tj=110℃) Peak gate power (tp=20μs, Tj=110℃) Average gate power dissipation(Tj=110℃) ITSM I2t dI/dt IGM PGM PG(AV) 2 […]

2 page

2P4M Datasheet

This entry was posted in Uncategorized. Bookmark the permalink.