This post explains for the transistor 2SC5200.
The Part Number is 2SC5200.
The function of this semiconductor is 230V, NPN Transistor.
Manufacturer: Toshiba Semiconductor
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Description:
This is Silicon NPN Triple Diffused Type Transistor.
Applications: Power Amplifier
Features:
1. High breakdown voltage: VCEO = 230 V (min)
2. Complementary to 2SA1943
3. Suitable for use in 100-W high fidelity audio amplifier’s output stage
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Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 230 V
2. Collector to Emitter Voltage: Vceo = 230 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 15 A
5. Collector Dissipation : Pc = 150 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 230 230 5 15 1.5 150 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-21F1A Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) V […]
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