2SC5200 Datasheet – NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

This post explains for the semiconductor 2SC5200.

The Part Number is 2SC5200.

The function of this semiconductor is NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS).

Manufacturers : Toshiba Semiconductor

Preview images :

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2SC5200 image

Description :

2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm • • • High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 230 230 5 15 1.5 150 150 −55 to 150 http://www.DataSheet4U.net/ Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-21F1A Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) V […]

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2SC5200 Datasheet


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