2SD2092 – NPN EPITAXIAL TYPE (SWITCHING/ LAMP/ SOLENOID DRIVE APPLICATIONS)

Part Number : 2SD2092

Function : NPN EPITAXIAL TYPE (SWITCHING/ LAMP/ SOLENOID DRIVE APPLICATIONS)

Manufactures : Toshiba Semiconductor

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Description :

2SD2092 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2092 Switching Applications Lamp, Solenoid Drive Applications Unit: mm • • High DC current gain: hFE (1) = 500 to 1500 Low collector saturation voltage: VCE (sat) = 0.3 V (max) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 100 100 7 3 5 1 2.0 25 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― SC-67 2-10R1A Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base Emitter 1 2006-11-21 Free Datasheet http:// 2SD2092 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter forward voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) VECF fT Cob Test Condition VCB = 100 V, IE = 0 VEB = 7 V, IC = 0 IC = 50 mA, IB = 0 VCE = 1 V, IC = 0.5 A VCE = 1 V, IC = 1 A IC = 1 A, IB = 10 mA IC = 1 A, IB = 10 mA IE = 1 A, IB = 0 VCE = 5 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Output 30 Ω Input Switching time Storage time tstg IB1 20 μs IB1 IB2 IB2 VCC = 30 V ― IB1 = −IB2 = 10 mA, duty cycle ≤ 1% 0.7 ― Min ― ― 100 500 150 ― ― ― ― ― Typ. ― ― ― ― ― ― ― ― 140 30 Max 10 10 ― 1500 ― 0.3 1.2 2.0 ― ― V V V MHz pF Unit μA μA V Turn-on time ton ― 0.5 ― ― 5 ― μs Fall time tf Marking D2092 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-21 Free Datasheet http:// 2SD2092 IC – VCE 1.2 2.8 20 2.4 2.0 1.6 1.2 0.8 0.4 0 0 2 10 4 Common emitter Tc = 25°C IB = 0.5 mA 2 0.8 4 VCE – IC Common emitter Tc = 25°C 10 14 20 VCE (V) Collector-emitter voltage 1.0 Collector current IC (A) 1.4 1 0.5 IB = 0.2 mA 0 2 4 6 8 10 12 14 16 18 0.6 30 0.4 40 80 0.2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Collector-emitter voltage VCE (V) Collector current IC (A) VCE – IC 1.2 Common emitter 1.2 IB = 0.5 mA […]

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2SD2092 Datasheet


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