Part Number: 2SK1007
Function: 450V, 5A, N-Channel MOSFET, Transistor
Package: TO-220C Type
Manufacturer: Inchange Semiconductor
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Description:
This is 450V, 5A, N-Channel MOSFET.
Features:
1. Drain Current –ID=5A@ TC=25℃
2. Drain Source Voltage- : VDSS= 450V(Min)
3. Minimum Lot-to-Lot variations for robust device performance and reliable operation.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 450 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 5 A
4. Power Dissipation: Pd = 60 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications
1. Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 2.5A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 450V; VGS= 0 VSD Forward On-Voltage IS=5A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=10A; RL=25Ω toff Turn-off time MIN TYP. MAX UNIT 450 V 2.5 3.5 5.0 V 1.1 1.6 Ω ±100 nA 500 uA 1.0 1.5 V 50 80 ns 60 95 ns 50 80 ns 130 200 ns isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn […]