What is 2N5401?
This is a PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. It has a maximum collector current rating of 0.6A, a maximum collector-emitter voltage rating of 150V, and a maximum power dissipation rating of 625mW.
Part Number: 2N5401
Function: -150V, -600mA, PNP Silicon Transistor
Package: TO-92 Type
Manufacturer: ISC, NTE, NXP, AuK
Pinouts:
Description:
This is General Purpose Si-Epitaxial Planar PNP Transistor. he 2N5401 comes in a TO-92 package and has a low noise figure, making it suitable for use in audio amplifier circuits.
• General purpose amplifier
• High voltage application
Features
• High collector breakdown voltage : VCBO= -160V, VCEO= -160V
• Low collector saturation voltage : VCE(sat)=-0.5V(MAX.)
• Complementary pair with 2N5551
• Junction Temperature: Tj = 150°C
• Storage Temperature: Tsg = -55 ~ +150°C
Advantage Vs disadvantage
Advantage:
1. High voltage and current handling capabilities
2. Low noise and distortion for use in audio amplifier circuits
3. Low power dissipation for efficient operation
4. Availability and cost-effectiveness
Disadvantage:
1. Limited maximum current rating, which makes it unsuitable for high power applications
2. Relatively low maximum frequency rating, which makes it unsuitable for high-speed applications
3. Limited gain bandwidth product, which limits its use in high-frequency amplification circuits
Other data sheets are available within the file: N5401
2N5401 Datasheet PDF Download
