2N7002P Datasheet – 60V, 360mA, N-ch, MOSFET, Transistor

Part Number: 2N7002P

Marking : LW%

Function: 60 V, 360 mA, N-channel Trench MOSFET

Package: SOT-23 (TO-236AB) Type

Manufacturer: NXP Semiconductors.

Image and Pinouts:

2N7002P datasheet

 

Description

This is a MOSFET. N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT-23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.

Features

1. AEC-Q101 qualified
2. Logic-level compatible
3. Trench MOSFET technology
4. Very fast switching

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 360 mA
4. Total Power Dissipation : Ptot = 350 mW
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -65 to +150 °C

 

Other data sheets are available within the file: 2N7002

 

2N7002P Datasheet PDF Download


2N7002P pdf