Part Number : 2N7002P
Marking : LW%
Function : 60 V, 360 mA, N-channel Trench MOSFET
Package : SOT-23 (TO-236AB) Type
Manufacturers : NXP Semiconductors.
Image and Pinouts :
Description :
This is a MOSFET. N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT-23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
Features :
1. AEC-Q101 qualified
2. Logic-level compatible
3. Trench MOSFET technology
4. Very fast switching
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 60 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 360 mA
4. Total Power Dissipation : Ptot = 350 mW
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -65 to +150 °C
Other data sheets within the file : 2N7002
2N7002P Datasheet PDF Download
