Part Number: 2N7002P
Marking : LW%
Function: 60 V, 360 mA, N-channel Trench MOSFET
Package: SOT-23 (TO-236AB) Type
Manufacturer: NXP Semiconductors.
Image and Pinouts:
Description:
This is a MOSFET. N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT-23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
Features:
1. AEC-Q101 qualified
2. Logic-level compatible
3. Trench MOSFET technology
4. Very fast switching
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 360 mA
4. Total Power Dissipation : Ptot = 350 mW
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -65 to +150 °C
Other data sheets are available within the file: 2N7002
2N7002P Datasheet PDF Download
