2N7002P Datasheet – 60V, 360mA, N-ch, MOSFET, Transistor

Part Number : 2N7002P

Marking : LW%

Function : 60 V, 360 mA, N-channel Trench MOSFET

Package : SOT-23 (TO-236AB) Type

Manufacturers : NXP Semiconductors.

Image and Pinouts :

2N7002P datasheet

 

Description :

This is a MOSFET. N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT-23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.

Features :

1. AEC-Q101 qualified
2. Logic-level compatible
3. Trench MOSFET technology
4. Very fast switching

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 60 V
2. Gate to source voltage : VGSS = ± 20 V
3. Drain current : ID = 360 mA
4. Total Power Dissipation : Ptot = 350 mW
5. Channel temperature : Tch = 150 °C
6. Storage temperature : Tstg = -65 to +150 °C

 

Other data sheets within the file : 2N7002

 

2N7002P Datasheet PDF Download


2N7002P pdf