2N7002T Datasheet – 60V, N-channel Trench MOSFET

Part Number : 2N7002T

Function : N-channel TrenchMOS FET

Package : SOT-23, TO-236AB Type

Manufacturers : Philips Semiconductor, NXP

Pinouts :

2N7002T datasheet

 

General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Features

1. Logic level threshold compatible
2. Surface-mounted package
3. Very fast switching
4. TrenchMOS technology

Applications

1. Logic level translator
2. High-speed line driver

Quick reference data

1. VDS≤60 V
2. RDSon≤5Ω
3. ID≤300 mA
4. Ptot ≤0.83 W

Limiting values

1. Drain-source voltage : Vds = 60 V
2. Drain current : Id = 300 mA
3. Total power dissipation : Ptot = 0.83 W

2N7002T Datasheet PDF

2N7002T pdf