Part Number: 2SC1615
Function: 210V, 30mA, NPN Transistor
Package: FTR Type
Manufacturer: ROHM Semiconductor
Image and Pinouts:
Description
This is 210V, 30mA, NPN Silicon Transistor for High Gain Amplifier.
Features
1. High breakdown voltage : Vcer = 210V
2. This triple-diffused planar transistor assures high reliability.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 210 V
2. Emitter to Base Voltage: Vebo = 5 V
3. Collector Current: Ic = 30 mA
4. Total Dissipation : Pc = 150 mW
5. Junction Temperature: Tj = 125°C
6. Storage Temperature: Tsg = -55 ~ + 125°C
Application
1. High Voltage Amplifier
Other data sheets are available within the file: 2SC4036, C1615, C4036
2SC1615 Datasheet PDF Download
