2SC1969 Transistor - 25V, 6A, NPN, Mitsubishi ( Datasheet )

Part Number: 2SC1969

Function: 25V, 6A, NPN Epitaxial Planar Type Transistor

Package: TO-220 Type

Image:

Pinouts:

Description

2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V

2. Collector to Emitter Voltage: Vceo = 25 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 6 A

5. Collector Dissipation : Pc = 1.7 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. 10 to 14 watt output power class AB amplifiers applications in HF band.

Other data sheets are available within the file: C1969