Part Number: 2SC1969
Function: 25V, 6A, NPN Epitaxial Planar Type Transistor
Package: TO-220 Type
Manufacturer: Mitsubishi Electric
Image:
Pinouts:
Description:
2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 60 V
2. Collector to Emitter Voltage: Vceo = 25 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 6 A
5. Collector Dissipation : Pc = 1.7 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Applications:
1. 10 to 14 watt output power class AB amplifiers applications in HF band.
2SC1969 Datasheet PDF Download
Other data sheets are available within the file: C1969