2SC1971 Datasheet PDF – RF Power Amplifier – Mitsubishi

Part Number : 2SC1971

Function : RF Power Transistor / NPN Epitaxail Planar Type

Package : TO220 Type, TO-30E

Manufacturers : MITSUBISHI ELECTRIC

Image

2SC1971 datasheet RF Power Amplifier

Description :

2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications.

Pinouts :
2SC1971 pinout

Features

1. Emitter ballasted construction, gold metallization for high reliability and good performances.

2. TO-220 package similar is combinient for mounting.

3. High power gain : Gpe > 10 dB

4. Ability of withstanding more than 20:1 load VSWR

 

Applications

4 to 5 watts output power amplifiers in VHF band applications.

 

Absolute Maximum Ratings

1. Collector to base voltage : Vcbo = 35 V
2. Emitter to base voltage : Vebo = 4 V
3. Collector to emitter voltage : Vceo = 17 V
4. Collector current : Ic = 2 A

 

Posts related to amplifier

Part numberDescription
AN7062NHigh Voltage Input Amplifier Circuit for Hi-Fi Power Amplifier
TA2020Digital Audio Power Amplifier
CD7522CS3W x 2BTL audio power amplifier
LM356LOW Voltage Audio Power Amplifier
BFW10VHF/UHF Amplifier(N-Channel/ Depletion)

 

2SC1971 Datasheet PDF Download

 

 

2SC1971 pdf

Other data sheets within the file : C1971