Part Number : 2SC2312
Function : 6A, 20V, RF Power NPN Transistor
Package : TO-220AB Type
Manufacturers : MITSUBISHI ELECTRIC
Pinouts :
Description :
Mitsubishi 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operationg HF band.
Features :
1. High Output, High Gain : Po = 17W, gpe = 10.5 dB, @ 27MHz, 12 V
2. Low IMD
3. Convenient plastic molded package.
Absoulute maximum ratings
1. Collector to Base Voltage : Vcbo = 60 V
2. Emitter to Base Voltage : Vebo = 5 V
3. Collector to Emitter Voltage : Vceo = 20 V
4. Collector Current : Ic = 6 A
5. Power Dissipation : Pc = 25 W
Other data sheets within the file : C2312
2SC2312 Datasheet PDF Download
