2SC2320 Datasheet PDF – Vcbo=50V, NPN Transistor

Part Number : 2SC2320

Function : NPN Epitaxial Planar Silicon Transistor

Package : TO-92 Type

Manufacturers : MITSUBISHI ELECTRIC

Pinouts : 1. Emitter  2. Collector  3. Base

Image :

2SC2320 datasheet

 

Description :

Complementary to 2SA999
Text :

2SC2320 Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications NPN Epitaxial Planar Silicon Transistor Excellent hFE Linearity Complementary to 2SA999 6.2 MAX. 5.6 MAX. Unit : mm 4.6 4.4 MAX. 1.5 1 2 3 0.45 10.5 MIN. MAXIMUM RATINGS (Ta = 25 °C) CHARACTERISTIC Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO VEBO VCEO Ic Pc Tj Tstg 50 6 50 200 300 125 -55~+125 V V V mA mW 1 : Emitter 2 : Collector 3 : Base 1.25 1 2 3 1.25 °C °C EIAJ : SC-43 JEDEC : TO-92 ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC Collector-Emitter Breakdown Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. V(BR)CEO Ic = 100μA, RBE = ∞ ICBO IEBO hFE hFE 50 0.1 0.1 90 50 0.3 200 3,5 2 800 Collector Cut-off current Emitter Cut-off current DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage VCB = 50V, IE = 0 VEB = 6V, Ic = 0 VCE = 6V, Ic = 1mA VCE = 6V, Ic = 0,1mA V μA μA VCE(sat) Ic = 100mA, IB = 10mA V MHz pF dB Transition Frequency Collector Output Capacitance Noise Figure fT Cob NF VCE = 6V, IE = 10mA VCB = 6V, IE = 0, f = 1MHz VCE = 6V, IE = 0,3mA f = 100Hz, RG = 10kΩ Rank hFE D E F hFE Rank classification : G 90~180 150~300 250~500 400~800 MITSUBISHI ELECTRIC 2SC2320 MITSUBISHI ELECTRIC …

2SC2320 Datasheet PDF Download

2SC2320 pdf

Other data sheets within the file :  2SC2320,C2320