Part Number: 2SC3336
Function: Silicon NPN Triple Diffused Transistor
Package: TO-3P Type
Manufacturer: Hitachi -> Renesas Electronics
Pinouts:
Description
High voltage, high speed and high power switching
Absolute Maximum Ratings
1. Collector to base voltage : VCBO = 500 V
2. Collector to emitter voltage : VCEO = 400 V
3. Emitter to base voltage : VEBO = 10 V
4. Collector current : IC = 15 A
5. Collector peak current : IC(peak) = 25 A
6. Base current : IB = 7.5 A
7. Collector power dissipation : PC*1 = 100 W
8. Junction temperature : Tj = 150 °C
Other data sheets are available within the file: C3336
2SC3336 Datasheet PDF
