Part Number: 2SC3356, Marking : R25
Function: 100mA, 12V, NPN Silicon Epitaxial Transistor
Package: 3-pin Minimode Type
Manufacturer: NEC ( Renesas Technology )
Images :
Description
The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.
Features
1. Low Noise and High Gain
(1) NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
2. High Power Gain
(2) MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Absolute Maximum Ratings
1. Collector to Base Voltage : VCBO = 20 V
2. Collector to Emitter Voltage : VCEO = 12 V
3. Emitter to Base Voltage : VEBO = 3.0 V
4. Collector Current : IC = 100 mA
5. Total Power Dissipation : PT = 200 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -65 ~ +150°C
Pinout
Applications
1. Microwave Low Noise Amplifier
Other data sheets are available within the file: C3356, R23, R24
2SC3356 Datasheet PDF Download
