2SC3356 Datasheet PDF- 12V, 100mA, NPN Transistor – NEC

Part Number : 2SC3356, Marking : R25

Function : 100mA, 12V, NPN Silicon Epitaxial Transistor

Package : 3-pin Minimode Type

Manufacturers : NEC ( Renesas Technology )

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2SC3356 datasheet

Description :

The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.

Features

1. Low Noise and High Gain
(1) NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz

2. High Power Gain
(2) MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

Absolute Maximum Ratings

1. Collector to Base Voltage : VCBO = 20 V
2. Collector to Emitter Voltage : VCEO = 12 V
3. Emitter to Base Voltage : VEBO = 3.0 V
4. Collector Current : IC = 100 mA
5. Total Power Dissipation : PT = 200 mW
6. Junction Temperature : Tj = 150°C
7. Storage Temperatue : Tsg = -65 ~ +150°C

Pinout

Applications

1. Microwave Low Noise Amplifier

Other data sheets within the file : C3356, R23, R24

2SC3356 Datasheet PDF Download

2SC3356 pdf