Part Number: 2SC5125
Function: 35V, 25A, RF Power NPN Epitaxail Planar Transistor
Package: T-40E Type
Manufacturer: MITSUBISHI ELECTRIC
Pinouts:
Description:
2SC5152 is a silicon NPN epitaxail planar type transistor specifically designed for high power amplifiers in VHF band.
Features
1. Emitter ballasted construction.
2. High reliability due to gold metalization die.
3. Flange type ceramic package.
Absoulte maximum ratings
1. Collector-base voltage : Vcbo = 35 V
2. Emitter-base voltage : Vebo = 4 V
3. Collector-emitter voltage : Vceo = 17 V
4. Collector current : 25 A
5. Collector dissipation : 170 W
Applications
For output stage of 70W power amplifier in VHF band.
Other data sheets are available within the file: C5125
2SC5125 Datasheet PDF Download
