2SC5125 Datasheet PDF – 35V, 25A, RF Power NPN Transistor

Part Number : 2SC5125

Function : 35V, 25A, RF Power NPN Epitaxail Planar Transistor

Package : T-40E Type

Manufacturers : MITSUBISHI ELECTRIC

Pinouts :

2SC5125 datasheet

 

Description :

2SC5152 is a silicon NPN epitaxail planar type transistor specifically designed for high power amplifiers in VHF band.

 

Features

1. Emitter ballasted construction.
2. High reliability due to gold metalization die.
3. Flange type ceramic package.

Absoulte maximum ratings

1. Collector-base voltage : Vcbo = 35 V
2. Emitter-base voltage : Vebo = 4 V
3. Collector-emitter voltage : Vceo = 17 V
4. Collector current : 25 A
5. Collector dissipation : 170 W

Applications

For output stage of 70W power amplifier in VHF band.

 

Other data sheets within the file : C5125

2SC5125 Datasheet PDF Download


2SC5125 pdf