2SD389 Datasheet – 60V, NPN Power Transistor

Part Number : 2SD389

Function : Silicon NPN Power Transistor

Package : TO-220C Type

Manufacturers : ISC ( INCHANGE Semiconductor )

Image and Pinouts

2SD389 datasheet

 

Description :

1. Collector-Emitter Breakdown Voltage  : V(BR)CEO = 60V(Min)
2. Wide Area of Safe Operation
3. High Power Dissipation

 

Applications :

Designed for medium power amplifier applications

Absolute maximum ratings

1. Collector-Base Voltage : VCBO = 60 V
2. Collector-Emitter Voltage : VCEO = 60 V
3. Emitter-Base Voltage : VEBO = 8 V
4. Collector Current-Continuous : IC = 3.0 A
5. Collector Power Dissipation @ TC=25℃ : PC = 25 W

Other data sheets within the file : D389

 

2SD389 Datasheet PDF

2SD389 pdf