Part Number: 2SH20
Function: 36A, 600V, Silicon N-Channel IGBT
Package: TO-3P Type
Manufacturer: Hitachi ( Renesas Electronics )
Image and Pinouts:
Description:
The 2SH20 is 600V, 36A, N-Channel IGBT.
An N-Channel IGBT, or Insulated Gate Bipolar Transistor, is a type of power transistor that combines the high-speed switching capabilities of a MOSFET with the low on-state resistance of a bipolar transistor. It is commonly used in high-power applications such as motor control, power supplies, and lighting.
The N-Channel IGBT is capable of switching large amounts of current with high speed and efficiency, making it ideal for applications that require high power output.
Features:
1. High speed switching
2. Low on saturation voltage
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage : VCES = 600 V
2. Gate to emitter voltage : VGES = ±20 V
3. Collector current : IC = 36 A
4. Collector peak current : ic(peak) = 60 A
5. Collector dissipation : PC = 100 W
6. Channel temperature : Tj = 150 °C
7. Storage temperature: Tstg = – 55 to +150 °C
Applications
1. High speed power switching
Other data sheets are available within the file: SH20
2SH20 Datasheet PDF Download
