Part Number : 2SK10A50D, Corrector Part Number : TK10A50D
Function : Silicon N Channel MOS Field Effect Transistor
Pacakge : TO-220 Type
Manufacturers : Toshiba
Images :
Description :
1. Low drain-source ON-resistance: RDS (ON)= 0.62 Ω(typ.)
2. High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.)
3. Low leakage current : IDSS= 10 μA (max) (VDS= 500 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-source voltage : VDSS = 500 V
2. Gate-source voltage : VGSS = ±30 V
3. Drain current : Id = 10 A
4. Drain power dissipation (Tc = 25°C) : PD = 45 W
5. Single pulse avalanche energy : EAS = 264 mJ
6. Avalanche current : IAR = 10 A
7. Repetitive avalanche energy : EAR = 4.5 mJ
Applications
1. Switching Regulator
Other data sheets within the file : K10A50D
2SK10A50D Datasheet PDF Download
