Part Number : 2SK2096
Function : 45A, 60V, Silicon N-Channel MOSFET
Package : TO-3P Type
Manufacturers : Hitachi ( Renesas Electronics )
Pinouts :
Description :
1. Low on-resistance
2. High speed switching
3. Low drive current
4. 4 V gate drive device can be driven from 5 V source
5. Suitable for switching regulator, DC-DC converter
6. Avalanche ratings
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 60 V
2. Gate to source voltage : VGSS = ±20 V
3. Drain current : ID = 45 A
4. Drain peak current : ID(pulse) = 180 A
5. Body to drain diode reverse drain current : IDR = 45 A
6. Avalanche current : IAP = 45 A
7. Avalanche energy : EAR = 173 mJ
8. Channel dissipation : Pch = 100 W
9. Channel temperature : Tch = 150 °C
10. Storage temperature : Tstg = -55 to +150 °C
Application
1. High speed power switching
Other data sheets within the file : K2096
2SK2096 Datasheet PDF Download
