Part Number: 2SK2412
Function: 60V, 20A, N-Channel MOS FIELD EFFECT TRANSISTOR
Package: TO-220 Type
Manufacturer: NEC ( Renesas Technology )
Image and Pinouts:
Description:
The 2SK2412 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.
An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
In an N-channel MOSFET, the source and drain terminals are connected to an N-type semiconductor material, while the gate terminal is insulated from the channel by a thin oxide layer. When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.
Features:
1. Low On-Resistance :
(1) RDS(on)1= 70 mΩMAX. (@ VGS= 10 V, ID= 10 A)
(2) RDS(on)2= 95 mΩMAX. (@ VGS= 4 V, ID= 10 A)
2. Low CissCiss= 860 pF TYP.
3. Built-in G-S Gate Protection Diodes
4. High Avalanche Capability Ratings
Absolute maximum ratings
1. Drain to Source Voltage : VDSS = 60 V
2. Gate to Source Voltage : VGSS = ±20 V
3. Drain Current (DC) : ID(DC) = ±20 A
4. Drain Current (pulse) : ID(pulse) = ±80 A
5. Total Power Dissipation (Tc = 25 °C) : PT1 = 30 W
6. Total Power Dissipation (TA = 25 °C) : PT2 = 2.0 W
7. Single Avalanche Current : IAS = 20 A
8. Single Avalanche Energy : EAS = 22.5 mJ
Other data sheets are available within the file: K2412, NEC2412
2SK2412 Datasheet PDF Download
