2SK2610 MOSFET – 900V, 5A, Transistor ( Datasheet PDF )

Part Number : 2SK2610

Function : Silicon N Channel MOS Type FET

Manufacturers : Toshiba

Image and Pinouts :
2SK2610 datasheet

Description :

This is Silicon N Channel MOS Type Field Effect Transistor.

Features :

1. Low drain−source ON resistance  : RDS (ON)= 2.3 Ω(typ.)

2. High forward transfer admittance  : |Yfs|=4.4 S (typ.)

3. Low leakage current  : IDSS= 100 µA (max) (VDS= 720 V)

4. Enhancement−mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1mA)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 900 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 5 A

4. Drain Power Dissipation : Pd = 150 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

 

2SK2610 Datasheet PDF Download

2SK2610 pdf

Other data sheets within the file : 2SK-2610, K2610