Part Number: 2SK2611
Function: 900V, 9A, Silicon N-Channel MOSFET
Package: TO-3P Type
Manufacturer: Toshiba
Image and Pinouts:
Description
This is Silicon N Channel MOS Type Field Effect Transistor.
Features
1. Low drain−source ON-resistance : RDS (ON)= 1.2 Ω(typ.)
2. High forward transfer admittance : |Yfs| =7.0 S (typ.)
3. Low leakage current : IDSS= 100 μA (max) (VDS= 720 V)
4. Enhancement−mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 900 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 9 A
4. Drain Power Dissipation: Pd = 150 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. DC−DC Converter
2. Relay Drive and Motor Drive
2SK2611
2SK2611 Datasheet PDF Download
Other data sheets are available within the file: K2611