2SK2925S Datasheet PDF – 60V, 10A, N-Ch, MOSFET

Part Number : 2SK2925S

Function : 10A, 60V, Silicon N Channel MOSFET

Package : DPAK-2 Type

Manufacturers : Hitachi ( Renesas Electronics )

Pinouts :

2SK2925S datasheet

Description :

1. Low on-resistance : RDS=0.060 Ωtyp.
2. High speed switching
3. 4V gate drive device can be driven from 5V source

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 60 V
2. Gate to source voltage : VGSS = ±20 V
3. Drain current : ID = 10 A
4. Drain peak current : ID(pulse) = 40 A
5. Body-drain diode reverse drain current : IDR = 10 A
6. Avalanche current : IAP = 10 A
7. Avalanche energy : EAR = 8.5 mJ
8. Channel dissipation : Pch = 20 W
9. Channel temperature : Tch = 150 °C
10. Storage temperature : Tstg = – 55 to +150 °C

Applications

1. High Speed Power Switching

 

Other data sheets within the file : 2SK2925, 2SK2925L, K2925

2SK2925S Datasheet PDF Download


2SK2925S pdf