Part Number : 2SK2980
Function : Silicon N Channel MOS FET High Speed Power Switching
Package : MPAK Type
Manufacturers : Hitachi -> Renesas Electronics
Pinouts :
Description :
1. Low on-resistance RDS(on)= 0. 2Ω typ. (V GS= 4 V, ID= 500 mA)
2. 2.5V gate drive devices.
3. Small package (MPAK)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 30 V
2. Gate to source voltage : VGSS = +12 V, –10 V
3. Drain current : ID = 1.0 A
4. Drain peak current : ID(pulse) = 4 A
5. Channel dissipation : Pch = 0.8 W
2SK2980 Datasheet PDF Download
Other data sheets within the file : K2980