2SK30 Datasheet – N-ch, Vgds=-50V, FET Transistor – Toshiba

Part Number : 2SK30, 2SK30A, 2SK30ATM

Description : N CHANNEL JUNCTION TYPE FET

Package : TO 92 Type

Manufactures : Toshiba Semiconductor

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2SK30 FET transistor

Applications

1. Low Noise Pre-Amplifier, Tone Control Amplifier

2. DC-AC High Input Impedance Amplifier Circuit

 

Features

1. High Breakdown Voltage : Vgds = -50V

2. High Input Impedance : Igss = -1nA ( Max.) ( Vgs = -30V )

3. Low Noise : NF = 0.5dB (Typ.) ( Vds=15, Vgs=0, Rg=100kOhm, f=120Hz)

 

Pinout

2SK30 datasheet pinout

 

Maximum Rating ( Ta = 25’C )

1. Gate-Drain Voltage : Vgds = -50V

2. Gate Current : Ig = 10mA

3. Drain Power Dissipation : Pd = 100mW

4. Junction Temperature : Tj = 125’C

 

2SK30 Datasheet

2SK30 pdf