Part Number : 2SK3158
Function : Silicon N Channel MOSFET
Package : TO-220AB Type
Manufacturers : Hitachi ( Renesas Electronics )
Pinouts :
Description :
1. Low on-resistance : RDS = 35mΩ typ.
2. High speed switching
3. 4V gate drive device can be driven from 5V source
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 150 V
2. Gate to source voltage : VGSS = ±20 V
3. Drain current : ID = 30 A
4. Drain peak current : ID(pulse) = 120 A
5. Body-drain diode reverse drain current : IDR = 30 A
6. Avalanche current : IAP = 30 A
7. Avalanche energy : EAR = 67 mJ
8. Channel dissipation : Pch = 100 W
Other data sheets within the file : K3158
2SK3158 Datasheet PDF Download
